OptiMOS®2 Power-Transistor
IPDH6N03LA G
IPFH6N03LA G
IPSH6N03LA G
IPUH6N03LA G
Product Summary
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
V DS
25
V
R DS(on),max (SMD version)
6
mΩ
ID
50
A
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
Type
IPDH6N03LA G
IPFH6N03LA G
IPSH6N03LA G
IPUH6N03LA G
Package
PG-TO252-3-11
PG-TO252-3-23
PG-TO251-3-11
PG-TO251-3-1
Marking
H6N03LA
H6N03LA
H6N03LA
H6N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C2)
50
T C=100 °C
50
Pulsed drain current
I D,pulse
T C=25 °C3)
350
Avalanche energy, single pulse
E AS
I D=50 A, R GS=25 Ω
150
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
6
Gate source voltage4)
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.5
Unit
A
mJ
kV/µs
±20
V
71
W
-55 ... 175
°C
55/175/56
page 1
2008-04-14
Parameter
IPDH6N03LA G
IPFH6N03LA G
IPSH6N03LA G
IPUH6N03LA G
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
2.1
minimal footprint
-
-
75
6 cm2 cooling area5)
-
-
50
25
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
SMD version, device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=30 µA
1.2
1.6
2
Zero gate voltage drain current
I DSS
V DS=25 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=25 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=30 A
-
8.2
10.2
mΩ
V GS=4.5 V, I D=30 A,
IPD version
-
8
10
V GS=10 V, I D=50 A
-
5.2
6.2
V GS=10 V, I D=50 A,
IPD version
-
5
6
-
1.3
-
Ω
35
69
-
S
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=50 A
1)
J-STD20 and JESD22
2)
Current is limited by bondwire; with an R thJC=2.1 K/W the chip is able to carry 80 A.
3)
See figure 3
4)
T j,max=150 °C and duty cycle D
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